SCOPUS 정보 검색 플랫폼

Current Applied Physics

Volumn 12, Issue 3, 2012, Pages 603-611

Impurity substitution effects in BiFeO 3 thin films - From a viewpoint of FeRAM applications

(1) Ishiwara, Hiroshi a

a Konkuk University (South Korea)

Author keywords

BiFeO 3; Fatigue; FeRAM; Ferroelectric; Impurity; La; Leakage current; Mn

Indexed keywords

BIFEO 3; COERCIVE VOLTAGES; COSUBSTITUTION; FATIGUE ENDURANCES; FE ATOMS; FERAM; FERROELECTRIC; FERROELECTRIC RANDOM ACCESS MEMORIES; IMPURITY ATOMS; IMPURITY EFFECT; IMPURITY SUBSTITUTION; INSULATING PROPERTIES; MN SUBSTITUTION; PERIODIC TABLE OF ELEMENTS; TRANSITION METAL ELEMENTS;

FATIGUE OF MATERIALS; FERROELECTRIC FILMS; FERROELECTRICITY; IMPURITIES; LEAKAGE CURRENTS; MANGANESE; THIN FILMS; TRANSITION METALS;

LANTHANUM;

EID: 84857446548 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.12.019 Document Type: Review

Times cited : (64)

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