Room temperature ferroelectric properties of Mn-substituted BiFeO 3 thin films deposited on Pt electrodes using chemical solution deposition

Applied Physics Letters

Volumn 88, Issue 26, 2006, Pages

  Singh, S K ^a   Ishiwara, H ^a   Maruyama, K ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CURRENT DENSITY; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; MANGANESE; SUBSTITUTION REACTIONS;

BIFEO THIN FILMS; CHEMICAL SOLUTION DEPOSITION; LEAKAGE CURRENT DENSITY; REMANENT POLARIZATION;

THIN FILMS;

EID: 33745625140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218819     Document Type: Article

References (15)

1. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000).
2. G. A. Smolenskii and I. Chupis, Sov. Phys. Usp. 25, 475 (1982).
3. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
4. K. Y. Yun, D. Ricinschi, T. Kanashima, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys., Part 2 43, L647 (2004).
5. S. Y. Yang, F. Zavaliche, L. M. Ardabili, V. Vaithyanathan, D. G. Schlom, Y. J. Lee, Y. H. Chu, M. P. Cruz, Q. Zhan, T. Zhao, and R. Ramesh, Appl. Phys. Lett. 87, 102903 (2005).
6. R. Ueno, S. Okaura, H. Funakubo, and K. Saito, Jpn. J. Appl. Phys., Part 2 44, L1231 (2005).
7. S. K. Singh and H. Ishiwara, Jpn. J. Appl. Phys., Part 2 44, L734 (2005).
8. J. R. Cheng and L. E. Cross, J. Appl. Phys. 94, 5188 (2003).
9. H. Uchida, R. Ueno, H. Nakaki, H. Funakubo, and S. Koda, Jpn. J. Appl. Phys., Part 2 44, L561 (2005).
10. D. Lee, M. G. Kim, S. Ryu, H. M. Jang, and S. G. Lee, Appl. Phys. Lett. 86, 222903 (2005).
11. S. K. Singh and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 45, 3194 (2006).
12. Y. K. Jun, W. T. Moon, C. M. Chang, H. S. Kim, H. S. Ryu. J. W. Kim. K. H. Kim, and H. Y. Hong, Solid State Commun. 135, 133 (2005).
13. V. R. Palkar, D. C. Kundaliya, and S. K. Malik, J. Appl. Phys. 93, 4337 (2003).
14. I. Sosnowska, W. Schafer, W. Kockelmann, K. H. Andersen, and I. O. Troyanchuk, Appl. Phys. A: Mater. Sci. Process. 74, S1040 (2002).
15. L. Pintilie and M. Alexe, Appl. Phys. Lett. 87, 112903 (2005).