Ferroelectric and impedance behavior of La- and Ti-codoped BiFeO 3 thin films

Journal of the American Ceramic Society

Volumn 93, Issue 9, 2010, Pages 2795-2803

  Wu, Jiagang ^a   Wang, John ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CO-DOPING; CONDUCTION MECHANISM; CONDUCTION PROCESS; DIRECT BAND GAP; FATIGUE BEHAVIOR; HIGH ELECTRIC FIELDS; IMPEDANCE ANALYSIS; IMPEDANCE BEHAVIOR; OFF-AXIS; OHMIC CONDUCTION; RADIO FREQUENCY SPUTTERING; REMANENT POLARIZATION; ROOM TEMPERATURE; SI (100) SUBSTRATE;

DIELECTRIC RELAXATION; DOPING (ADDITIVES); ELECTRIC FIELDS; ENERGY GAP; ENGINEERING EXHIBITIONS; FERROELECTRICITY; IRON OXIDES; OXYGEN; OXYGEN VACANCIES; SILICON COMPOUNDS; SPUTTERING; THIN FILMS;

VAPOR DEPOSITION;

EID: 77956357330     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.03816.x     Document Type: Article

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