Microstructure, electrical and magnetic properties of Ce-doped BiFeO 3 thin films

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Quan, Zuci ^a   Liu, Wei ^a   Hu, Hao ^a   Xu, Sheng ^a   Sebo, Bobby ^a   Fang, Guojia ^a   Li, Meiya ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CAPACITANCE; CAPACITORS; CERIUM; CERIUM COMPOUNDS; COLLOIDS; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; FLUORINE; GELATION; HYSTERESIS; HYSTERESIS LOOPS; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETS; MICROSTRUCTURE; OXYGEN; SATURATION MAGNETIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; THIN FILMS; VACANCIES;

ANHARMONIC INTERACTIONS; APPLIED VOLTAGES; BINDING ENERGY REGIONS; CANTING ANGLES; CE CONCENTRATIONS; CONDUCTION MECHANISMS; DIELECTRIC AND FERROELECTRIC PROPERTIES; ELECTRICAL AND MAGNETIC PROPERTIES; FILM CAPACITORS; FILM SHIFTS; GLASS SUBSTRATES; OXYGEN OCTAHEDRONS; PHONON LIFETIMES; RED SHIFTS; SCHOTTKY EMISSIONS; SOL - GELS; SPIRAL SPIN STRUCTURES;

OXYGEN VACANCIES;

EID: 55249103877     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000478     Document Type: Article

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