Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn cosubstitution and their ferroelectric properties

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7586-7589

  Kawae, Takeshi ^a   Tsuda, Hisashi ^a   Naganuma, Hiroshi ^b   Yamada, Satoru ^c   Kumeda, Minoru ^a   Okamura, Soichiro ^d   Morimoto, Akiharu ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

BiFeO3; Cosubstitution; Mn; Nd; Pb free materials; PLD; Thin films

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL ANALYSIS; DIELECTRIC DEVICES; DIFFRACTION; ELECTRIC EQUIPMENT; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FILMS; HOLOGRAPHIC INTERFEROMETRY; HYSTERESIS; HYSTERESIS LOOPS; LEAD; LEAKAGE CURRENTS; MAGNETIC MATERIALS; MANGANESE; MANGANESE COMPOUNDS; POLARIZATION; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING BISMUTH COMPOUNDS; THICK FILMS; LEAD ALLOYS; NEODYMIUM; PROGRAMMABLE LOGIC CONTROLLERS; THIN FILMS;

BIFEO3; COSUBSTITUTION; MN; ND; PB-FREE MATERIALS; PLD; COSUBSTITUTLON;

NEODYMIUM; SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 55149125825     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7586     Document Type: Article

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