Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Qi, Xiaoding ^a   Dho, Joonghoe ^a   Tomov, Rumen ^a   Blamire, Mark G ^a   MacManus Driscoll, Judith L ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; IONIC CONDUCTION; LEAKAGE CURRENTS; TRANSPORT PROPERTIES;

CURRENT-VOLTAGE; DC RESISTIVITY; FREE-CARRIERS; OXYGEN VACANCIES;

THIN FILMS;

EID: 18744378644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862336     Document Type: Article

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