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Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Valence-driven electrical behavior of manganese-modified bismuth ferrite thin films

(4) Wu, Jiagang a,b Wang, John b Xiao, Dingquan a Zhu, Jianguo a

a SICHUAN UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH FERRITES; CONCENTRATION OF FE; DOMINANT MECHANISM; DOPED FILMS; ELECTRICAL BEHAVIORS; FOWLER-NORDHEIM TUNNELING; HIGH ELECTRIC FIELDS; OHMIC CONDUCTION; RF-SPUTTERING; SCHOTTKY BARRIERS; SPACE-CHARGE-LIMITED;

BISMUTH; ELECTRIC FIELDS; FERRITE; FERRITES; MANGANESE; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 79960178760 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596826 Document Type: Article

Times cited : (29)

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