Formation of BiFeO3-BiScO3 thin films and their electrical properties

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 B, 2006, Pages 7321-7324

  Yasui, Shintaro ^a,b   Uchida, Hiroshi ^a   Nakaki, Hiroshi ^b   Funakubo, Hiroshi ^b   Koda, Seiichiro ^a  

^a SOPHIA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BiFeO3; BiScO3; Ferroelectricity; Leakage current density; Sol gel process; Solid solution; Thin film

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; FERROELECTRICITY; LEAKAGE CURRENTS; SOLID SOLUTIONS;

BIFEO3; BISCO3; LEAKAGE CURRENT DENSITY; SOL-GEL PROCESSES;

THIN FILMS;

EID: 33749024984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7321     Document Type: Article

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