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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Combined effects of bilayer structure and ion substitutions on bismuth ferrite thin films

(4) Wu, Jiagang a,b Wang, John b Xiao, Dingquan a Zhu, Jianguo a

a SICHUAN UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BI-LAYER STRUCTURE; BISMUTH FERRITES; COMBINED EFFECT; DIELECTRIC CONSTANTS; DIFFERENT THICKNESS; ELECTRICAL BEHAVIORS; FATIGUE BEHAVIOR; FATIGUE ENDURANCES; ION SUBSTITUTION; RADIO FREQUENCY SPUTTERING; REMANENT POLARIZATION; SI (100) SUBSTRATE; THICKNESS RATIO;

BISMUTH; ELECTRIC FIELDS; FERRITES; SILICON COMPOUNDS; THIN FILMS; TIN; ZINC;

LANTHANUM;

EID: 79955378663 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3563573 Document Type: Conference Paper

Times cited : (16)

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