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Volumn 86, Issue 3, 2005, Pages 1-3
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Mechanism of polarization enhancement in La-doped Bi4Ti3O12 films
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Author keywords
[No Author keywords available]
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Indexed keywords
FERROELECTRIC RANDOM ACCESS MEMORIES (FERAM);
INTERNAL STRAIN RELAXATION;
METALORGANIC DECOMPOSITION (MOD) METHOD;
POLARIZATION ENHANCEMENT;
DEPOSITION;
ELECTROMAGNETIC WAVE POLARIZATION;
FERROELECTRICITY;
LANTHANUM;
RAMAN SCATTERING;
RANDOM ACCESS STORAGE;
SEMICONDUCTING BISMUTH COMPOUNDS;
SEMICONDUCTING LEAD COMPOUNDS;
SEMICONDUCTOR DOPING;
STRONTIUM COMPOUNDS;
X RAY DIFFRACTION ANALYSIS;
THICK FILMS;
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EID: 17044362678
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1849422 Document Type: Article |
Times cited : (61)
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References (18)
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