Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFe O3 thin film

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Hu, G D ^a   Fan, S H ^a,b   Yang, C H ^a   Wu, W B ^a  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG JIANZHU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); FERROELECTRIC MATERIALS; HYSTERESIS LOOPS; LEAKAGE CURRENTS; OXYGEN VACANCIES; REMANENCE;

CHARGE RETAINING ABILITY; FERROELECTRIC PROPERTIES; METAL ORGANIC DECOMPOSITION PROCESS;

THIN FILMS;

EID: 44049109248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918130     Document Type: Article

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