Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Chu, Y H ^a   Zhan, Q ^a   Yang, C H ^a   Cruz, M P ^a   Martin, L W ^a   Zhao, T ^a   Yu, P ^a   Ramesh, R ^a   Joseph, P T ^b   Lin, I N ^b   Tian, W ^c   Schlom, D G ^c  

^a University of California Berkeley   (United States)

^b TAMKANG UNIVERSITY   (Taiwan)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; HYSTERESIS LOOPS; LANTHANUM COMPOUNDS; PERMITTIVITY; SILICON COMPOUNDS; SUBSTITUTION REACTIONS;

COERCIVE VOLTAGE; CONTROL DOMAIN STRUCTURE; RHOMBOHEDRAL DISTORTION;

EPITAXIAL FILMS;

EID: 40849126982     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2897304     Document Type: Article

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