Effects of Ni substitution on structural, dielectrical, and ferroelectric properties of chemical-solution-deposited multiferroic BiFeO3 films

Electrochemical and Solid-State Letters

Volumn 11, Issue 7, 2008, Pages

  Singh, S K ^a,e   Palai, R ^b   Maruyama, K ^c   Ishiwara, H ^a,d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c FUJITSU LABORATORIES LTD   (Japan)

^d ELECTROCHEMICAL SOCIETY

^e SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; HYSTERESIS LOOPS; LEAKAGE CURRENTS; OXIDE FILMS; PEROVSKITE; POLARIZATION;

ELECTRIC FIELD HYSTERESIS LOOPS; PEROVSKITE PHASE; RHOMBOHEDRAL STRUCTURE; ROOM TEMPERATURE;

THIN FILMS;

EID: 43949090520     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2912024     Document Type: Article

References (15)

1. N. A. Hill, J. Phys. Chem. B 1089-5647 10.1021/jp000114x, 104, 6694 (2000).
2. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, Science 0036-8075 10.1126/science.1080615, 299, 1719 (2003).
3. G. Smolenskii, V. Yudin, E. Sher, and Y. E. Stolypin, Sov. Phys. JETP, 16, 622 (1963).
4. G. Smolenskii, V. Isupov, A. Agranovskaya, and N. Kranik, Sov. Phys. Solid State, 2, 2651 (1961).
5. R. Palai, R. S. Katiyar, H. Schmid, P. Tissot, S. J. Clark, J. Robertson, S. A. T. Redfern, G. Catalan, and J. F. Scott, Phys. Rev. B 0163-1829 10.1103/PhysRevB.77.014110, 77, 014110 (2008).
6. F. Kubel and H. Schmid, Acta Crystallogr. B, 46, 698 (1990). 0567-7408
7. J. Li, J. Wang, M. Wuttig, R. Ramesh, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1764944, 84, 5261 (2004).
8. Y. H. Lee, J. M. Wu, Y. L. Chueh, and L. J. Chou, Appl. Phys. Lett. 0003-6951 10.1063/1.2112181, 87, 172901 (2005).
9. S. K. Singh, K. Maruyama, and H. Ishiwara, J. Appl. Phys. 0021-8979 10.1063/1.2338836, 100, 064102 (2006).
10. S. K. Singh, K. Maruyama, and H. Ishiwara, J. Phys. D 0022-3727 10.1088/0022-3727/40/9/004, 40, 2705 (2007).
11. S. K. Singh, K. Maruyama, and H. Ishiwara, Appl. Phys. Lett. 0003-6951 10.1063/1.2218819, 88, 262908 (2006).
12. S. K. Singh, K. Sato, H. Maruyama, and H. Ishiwara, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.45.L1087, 45, L1087 (2006).
13. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 0003-6951 10.1063/1.1862336, 86, 062903 (2005).
14. R. Palai, J. Phys. D 0022-3727 10.1088/0022-3727/38/8/015, 38, 1190 (2005).
15. V. A. Murashov, D. N. Rakov, V. M. Ionov, I. S. Dubenko, and Y. V. Titos, Ferroelectrics, 162, 11 (1994). 0015-0193