Extreme bottom-up superfilling of through-silicon-vias by damascene processing: Suppressor disruption, positive feedback and turing patterns

Journal of the Electrochemical Society

Volumn 159, Issue 4, 2012, Pages

  Moffat, T P ^a   Josell, D ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM SURFACES; COPPER SUPERFILLING; DAMASCENE PROCESSING; ELECTROLYTE RESISTANCE; ELECTROPLATING BATH; GLOBAL COUPLING; GROWING SURFACES; GROWTH FRONT; GROWTH MODES; METAL CATION; METAL DEPOSITION; PLANAR SUBSTRATE; SATURATED SURFACES; SUPERFILLING; SURFACE FEATURE; THROUGH SILICON VIAS; TURING PATTERNS; VIA FILLING; VOLTAMMETRIC; WATER OF HYDRATION;

ADSORPTION; CHLORINE COMPOUNDS; ELECTROLYTES; HYDRATION;

ETHERS;

EID: 84857428600     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.040204jes     Document Type: Article

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