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Volumn 14, Issue 6, 2011, Pages

Highly selective Cu electrodeposition for filling through silicon holes

Author keywords

[No Author keywords available]

Indexed keywords

CHIP STACKING; COPPER CHEMICAL-MECHANICAL POLISHING; ORGANIC ADDITIVES; POST-THERMAL ANNEALING; PROCESS STEPS; THROUGH SILICON VIAS;

EID: 79953785489     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3562278     Document Type: Article
Times cited : (42)

References (20)
  • 2
    • 61649087224 scopus 로고    scopus 로고
    • 10.1147/JRD.2008.5388561
    • P. G. Emma and E. Kursun, IBM J. Res. Dev., 52, 541 (2008). 10.1147/JRD.2008.5388561
    • (2008) IBM J. Res. Dev. , vol.52 , pp. 541
    • Emma, P.G.1    Kursun, E.2
  • 14
    • 33747670896 scopus 로고    scopus 로고
    • Fabrication of high aspect ratio 35 μm pitch through-wafer copper interconnects by electroplating for 3-D wafer stacking
    • DOI 10.1149/1.2236374
    • P. Dixit, J. Miao, and R. Preisser, Electrochem. Solid-State Lett., 9, G305 (2006). 10.1149/1.2236374 (Pubitemid 44270901)
    • (2006) Electrochemical and Solid-State Letters , vol.9 , Issue.10
    • Dixit, P.1    Miao, J.2    Preisser, R.3
  • 20
    • 14744275071 scopus 로고    scopus 로고
    • Roles of chloride ion in microvia filling by copper electrodeposition I. Studies using SEM and optical microscope
    • DOI 10.1149/1.1849934
    • W.-P. Dow and H. -S. H.-S. Huang, J. Electrochem. Soc., 152, C67 (2005). 10.1149/1.1849934 (Pubitemid 40325832)
    • (2005) Journal of the Electrochemical Society , vol.152 , Issue.2
    • Dow, W.-P.1    Huang, H.-S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.