Review paper: Advanced source and drain technologies for low power CMOS at 22/20 nm node and below

Electronic Materials Letters

Volumn 7, Issue 4, 2011, Pages 277-285

  Song, Seung Chul ^a   Blatchford, James W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

20 nm; 22 nm; cluster implant; cryo implant; eSiGe epi; flash anneal; laser anneal; molecular implant; process induced strain; Schottky Barrier Height; shallow junction; SiC epi; supersaturation

Indexed keywords

20 NM; 22 NM; ESIGE EPI; FLASH ANNEAL; LASER ANNEAL; MOLECULAR IMPLANTS; PROCESS INDUCED STRAINS; SCHOTTKY BARRIER HEIGHTS; SHALLOW JUNCTION; SIC EPI;

CARRIER MOBILITY; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SUPERSATURATION;

TECHNOLOGY;

EID: 84855542007     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-011-1050-6     Document Type: Review

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