Ultra-shallow carborane molecular implant for 22-nm node p-MOSFET performance boost

Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

Volumn , Issue , 2009, Pages 27-30

  Colombeau, B ^a   Thanigaivelan, T ^a   Arevalo, E ^a   Toh, T ^a   Miura, R ^a   Ito, H ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INCORPORATION; CARBORANES; DRIVE CURRENTS; HIGH PERFORMANCE APPLICATIONS; LOW POWER; MOLECULAR IMPLANTS; OVERLAP CAPACITANCE; PHYSICAL EFFECTS; PMOS TRANSISTORS; PMOSFET; SHORT-CHANNEL EFFECT;

BORON; BORON COMPOUNDS;

MOSFET DEVICES;

EID: 77950159512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2009.5166211     Document Type: Conference Paper

References (2)

1. K. Goto et al., IEDM Tech. Dig. (1996), p.435.
2. A. Renau et al., IWJT (2007), p.107.