Tuning of the nickel silicide schottky barrier height on p-type silicon by indium implantation

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1272-1274

  Alptekin, Emre ^a   Ozturk, Mehmet C ^a  

^a North Carolina State University   (United States)

Author keywords

Contact resistivity; Indium (In); Nickel; Schottky barrier

Indexed keywords

BARRIER HEIGHTS; CONTACT RESISTIVITIES; CONTACT RESISTIVITY; IMPLANTED REGION; NICKEL SILICIDE; P-TYPE SI; P-TYPE SILICON; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SIGNIFICANT IMPACTS; SILICIDE FORMATION;

INDIUM; NICKEL; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70549113551     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033451     Document Type: Article

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