Embedded silicon germanium (eSiGe) technologies for 45nm nodes and beyond

IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Volumn , Issue , 2008, Pages 73-77

  Tamura, Naoyoshi ^a   Shimamune, Yosuke ^a   Maekawa, Hirotaka ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BORON; BORON COMPOUNDS; COMPUTER NETWORKS; CONCENTRATION (PROCESS); ELECTRON BEAM LITHOGRAPHY; GERMANIUM; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NANOTECHNOLOGY; SILICON; STACKING FAULTS; SURFACE CLEANING; SURFACE TREATMENT; TECHNOLOGY;

EMBEDDED SILICON GERMANIUM; EXTENDED ABSTRACTS; LOW TEMPERATURE; STACKING FAULTING;

EPITAXIAL GROWTH;

EID: 50949124792     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2008.4540021     Document Type: Conference Paper

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