Strain enhanced nMOS using in situ doped embedded Si1-χ Cχ S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1206-1208

  Verheyen, Peter ^a   Machkaoutsan, Vladimir ^b   Bauer, Matthias ^c   Weeks, Doran ^c   Kerner, Christopher ^a   Clemente, Francesca ^a   Bender, Hugo ^a   Shamiryan, Denis ^a   Loo, Roger ^a   Hoffmann, Thomas ^a   Absil, Philippe ^a   Biesemans, Serge ^a   Thomas, Shawn G ^c  

^a IMEC   (Belgium)

^b ASM BELGIUM   (Belgium)

^c ASM AMERICA   (United States)

Author keywords

Embedded source and drain (S D); Si1 C ; Strained Si

Indexed keywords

ELECTRIC RESISTANCE; EPITAXIAL LAYERS; HEAT TREATMENT; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SILICIDES; SILICON;

DEPOSITION PROCESSES; DEVICE PERFORMANCES; EMBEDDED SOURCE AND DRAIN (S/D); EPITAXIAL PROCESSES; HIGH CARBON CONTENTS; IN-SITU; INTEGRATION SCHEMES; LAYER PARAMETERS; MOS FETS; NMOSFET; SI CAPPING; SOURCE AND DRAINS; STRAINED SI; SUBSTITUTIONAL CARBON CONTENTS; THERMAL TREATMENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 55149093887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005593     Document Type: Article

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