메뉴 건너뛰기




Volumn 87, Issue 1-2, 2000, Pages 90-95

Study of nickel silicide film as a mechanical material

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EVAPORATION; FILM PREPARATION; MECHANICAL VARIABLES MEASUREMENT; MICROELECTROMECHANICAL DEVICES; RAPID THERMAL ANNEALING; SINTERING; STRUCTURE (COMPOSITION); THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0034500739     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00463-5     Document Type: Article
Times cited : (34)

References (17)
  • 4
    • 0029488445 scopus 로고
    • Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices
    • Mukai R., Ozawa S., Yagi H. Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices. Thin Solid Films. 270:1995;567-572.
    • (1995) Thin Solid Films , vol.270 , pp. 567-572
    • Mukai, R.1    Ozawa, S.2    Yagi, H.3
  • 10
    • 0343100631 scopus 로고    scopus 로고
    • Structural investigation of self-aligned silicidation on separation by implantation oxygen, Part I
    • Deng F., Ring K., Guan Z.F., Lau S.S., Dubbelday W.B., Wang N., Fung K.K. Structural investigation of self-aligned silicidation on separation by implantation oxygen, Part I. J. Appl. Phys. 81(12):1997;1-7.
    • (1997) J. Appl. Phys. , vol.81 , Issue.12 , pp. 1-7
    • Deng, F.1    Ring, K.2    Guan, Z.F.3    Lau, S.S.4    Dubbelday, W.B.5    Wang, N.6    Fung, K.K.7
  • 12
    • 0019584298 scopus 로고
    • On the thermoelastic properties of hydrogenerated amorphous silicon
    • Korhonen A.S., Jones P.L., Cocks F.H. On the thermoelastic properties of hydrogenerated amorphous silicon. Mater. Sci. Eng. 49:1981;127.
    • (1981) Mater. Sci. Eng. , vol.49 , pp. 127
    • Korhonen, A.S.1    Jones, P.L.2    Cocks, F.H.3
  • 13
    • 0020738122 scopus 로고
    • Effect of phosphorus doping on stress in silicon and polycrystalline silicon
    • Murarka S.P., Retajczyk T.F. Jr. Effect of phosphorus doping on stress in silicon and polycrystalline silicon. J. Appl. Phys. 54(4):1983;2069.
    • (1983) J. Appl. Phys. , vol.54 , Issue.4 , pp. 2069
    • Murarka, S.P.1    Retajczyk, T.f.jr.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.