Comments on effective modulation of Ni silicide schottky barrier height using chlorine Ion implantation and segregation

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 417-418

  Connelly, Daniel ^a   Clifton, Paul ^a  

^a Acorn Technologies   (United States)

Author keywords

MOS devices; Schottky barriers; Semiconductor device modeling; Semiconductor metal interfaces; Silicon

Indexed keywords

BARRIER HEIGHTS; CHLORINE ION IMPLANTATION; NI SILICIDE; NONIDEALITY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMICONDUCTOR DEVICE MODELING; SEMICONDUCTOR-METAL INTERFACES; SERIES RESISTANCES; SILICON SUBSTRATES;

CHLORINE; ION IMPLANTATION; MOS DEVICES; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR METAL BOUNDARIES; SEMICONDUCTOR SWITCHES; SILICIDES;

SEMICONDUCTING SILICON;

EID: 77951880660     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2044360     Document Type: Article

References (9)

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