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Volumn , Issue , 2007, Pages 113-118

Molecular implants for advanced devices

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); POLYSILICON;

EID: 47649132396     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279961     Document Type: Conference Paper
Times cited : (4)

References (16)
  • 1
    • 47649085640 scopus 로고    scopus 로고
    • 20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Application to Cluster Ion Beams, and Current Status of the Application to Industry
    • Marseille, France, June
    • I. Yamada, "20 Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of the Application to Cluster Ion Beams, and Current Status of the Application to Industry", Proceedings of the XVI International Conference on Ion Implantation Technology, Marseille, France, June 2006, p. 147.
    • (2006) Proceedings of the XVI International Conference on Ion Implantation Technology , pp. 147
    • Yamada, I.1
  • 5
    • 34250179473 scopus 로고    scopus 로고
    • Advantageous decaborane ion implantation for ultra-shalow junction of PMOSFETs compared with boron for monomer implantation into germanium preamorphized layer
    • Shanghai, China, May
    • T. Aoyama, et al., "Advantageous decaborane ion implantation for ultra-shalow junction of PMOSFETs compared with boron for monomer implantation into germanium preamorphized layer" Extended Abstracts of the Sixth International Workshop on Junction Technology, Shanghai, China, May 2006, p. 88.
    • (2006) Extended Abstracts of the Sixth International Workshop on Junction Technology , pp. 88
    • Aoyama, T.1
  • 9
    • 78649844915 scopus 로고    scopus 로고
    • Ultra-Shallow Junction Formation Using Conventional Ion Implantation and Rapid Thermal Annealing
    • Alpbach, Austria, September
    • A. Agarwal, "Ultra-Shallow Junction Formation Using Conventional Ion Implantation and Rapid Thermal Annealing," Proceedings of the XIII International Conference on Ion Implantation Technology, Alpbach, Austria, September 2000, p. 293.
    • (2000) Proceedings of the XIII International Conference on Ion Implantation Technology , pp. 293
    • Agarwal, A.1
  • 10
    • 0141649609 scopus 로고    scopus 로고
    • The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88nm feature size and beyond
    • J. Y. Kim et al., "The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88nm feature size and beyond," Symp. VLSI Tech. p. 11 (2003).
    • (2003) Symp. VLSI Tech , pp. 11
    • Kim, J.Y.1
  • 12
    • 47649125934 scopus 로고    scopus 로고
    • Properties of Ultra-Low Energy Boron Implants using Octadecaborane
    • Napa, CA, May
    • M. S. Ameen, et al., "Properties of Ultra-Low Energy Boron Implants using Octadecaborane," Proceedings of the Insight 2007 Conference, Napa, CA, May 2007.
    • (2007) Proceedings of the Insight 2007 Conference
    • Ameen, M.S.1
  • 13
    • 33751321119 scopus 로고    scopus 로고
    • Characterization of octadecaborane implantation into Si using molecular dynamics
    • L. A. Marquis, et al., "Characterization of octadecaborane implantation into Si using molecular dynamics", Phys. Rev. B 74, 201201(2006).
    • (2006) Phys. Rev. B , vol.74 , pp. 201201
    • Marquis, L.A.1
  • 16
    • 33846950056 scopus 로고    scopus 로고
    • Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation
    • Marseille, France, June
    • W. Krull, et al., "Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation," Proceedings of the XVI International Conference on Ion Implantation Technology, Marseille, France, June 2006, p. 182.
    • (2006) Proceedings of the XVI International Conference on Ion Implantation Technology , pp. 182
    • Krull, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.