Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 497-500

  Ang, Kah Wee ^a   Chui, King Jien ^a   Bliznetsov, Vladimir ^b   Wang, Yihua ^b   Wong, Lai Yin ^b   Tung, Chih Hang ^b   Balasubramanian, N ^b   Li, Ming Fu ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; LATTICE MISMATCH; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TENSILE STRAIN;

CARBON MOLE FRACTION; DRIVE CURRENT; GATE LENGTH;

MOSFET DEVICES;

EID: 33847755083     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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