Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 918-920

  Sinha, Mantavya ^a   Chor, Eng Fong ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Aluminum (Al) implant; contact resistance; double species implant; FinFETs; nickel silicide (NiSi); Schottky barrier height; sulfur (S) implant

Indexed keywords

CMOS FINFETS; COMPENSATION EFFECTS; CONTACT TECHNOLOGIES; DOUBLE-SPECIES IMPLANT; ELECTRON BARRIER; FINFETS; HOLE BARRIER; INTEGRATION SCHEME; ION IMPLANT; NEAR BAND EDGE; NICKEL SILICIDE; NICKEL SILICIDE (NISI); PROCESS SIMPLIFICATION; SCHOTTKY BARRIER HEIGHTS; SINGLE-MASK;

ALUMINUM; CONTACT RESISTANCE; MESFET DEVICES; NICKEL; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SULFUR;

INTEGRATED CIRCUITS;

EID: 77956170175     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052586     Document Type: Article

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