Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

  Feste, S F ^a   Knoch, J ^b   Buca, D ^a   Zhao, Q T ^a   Breuer, U ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; DOPANT CONCENTRATIONS; DOPANT PROFILE; DOPANT SEGREGATION; IMPLANTATION DOSE; IMPLANTATION ENERGIES; LOW-TEMPERATURE MEASUREMENTS; NICKEL SILICIDE; NISI LAYERS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SILICIDATION; SYSTEMATIC ANALYSIS; TWO-STEP ANNEALING;

ARSENIC; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SILICIDES; TEMPERATURE MEASUREMENT;

NICKEL COMPOUNDS;

EID: 77749240490     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3284089     Document Type: Article

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