The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2770-2777

  Lee, Rinus Tek Po ^a   Koh, Alvin Tian Yi ^b   Tan, Kian Ming ^b   Liow, Tsung Yang ^c   Chi, Dong Zhi ^d   Yeo, Yee Chia ^a,e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Chartered Semiconductor Manufacturing   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e AGENCY FOR SCIENCE   (Singapore)

Author keywords

Dysprosium; FinFET; Nickel silicide; Schottky barrier; Silicon:carbon

Indexed keywords

CONTACT INTERFACE; DRIVE CURRENTS; ELECTRON BARRIER; FINFET; INDUCED ENERGY; MOSFETS; N-CHANNEL; NICKEL SILICIDE; SCHOTTKY BARRIER; SCHOTTKY-BARRIER HEIGHTS; TRANSISTOR PERFORMANCE;

CHARGE TRANSFER; DIELECTRIC MATERIALS; DYSPROSIUM; FIELD EFFECT TRANSISTORS; ION EXCHANGE; NICKEL; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; SOLID-STATE SENSORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350743005     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030873     Document Type: Article

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