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Volumn 57, Issue 5, 2010, Pages 1084-1092

Dopant-segregated Schottky junction tuning with fluorine pre-silicidation ion implant

Author keywords

Dopant segregation; Fluorine; Metallic source drain (MSD); Ni diffusion; NiSi; Schottky barrier (SB); Thermal instability

Indexed keywords

CONCENTRATION OF; DIODE LEAKAGE; DOPANT CONCENTRATIONS; DOPANT PROFILE; DOPANT SEGREGATION; GENERATION-RECOMBINATION; IMPLANT TO SILICIDES; ION IMPLANT; MOSFETS; NI DIFFUSION; PERFORMANCE OPTIMIZATIONS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY JUNCTIONS; SILICIDATION; SOURCE/DRAIN EXTENSION REGIONS; SPATIAL DISTRIBUTION; THERMAL INSTABILITIES;

EID: 77951622282     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2044283     Document Type: Article
Times cited : (18)

References (43)
  • 2
    • 4544244783 scopus 로고    scopus 로고
    • Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique
    • in
    • A. Kinoshita, Y. Tsuchiya, A. Yagashita, K. Uchida, and J. Koga, "Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique, " in VLSI Symp. Tech. Dig., 2004, pp. 168-169.
    • (2004) VLSI Symp. Tech. Dig. , pp. 168-169
    • Kinoshita, A.1    Tsuchiya, Y.2    Yagashita, A.3    Uchida, K.4    Koga, J.5
  • 3
    • 2942750455 scopus 로고    scopus 로고
    • A novel 25-nm modified Schottky-barrier FinFET with high performance
    • Jun
    • B.-Y. Tsui and C.-P. Lin, "A novel 25-nm modified Schottky-barrier FinFET with high performance, " IEEE Electron Device Lett., vol. 25, no. 6, pp. 430-432, Jun. 2004.
    • (2004) IEEE Electron. Device Lett. , vol.25 , Issue.6 , pp. 430-432
    • Tsui, B.-Y.1    Lin, C.-P.2
  • 4
    • 67349263386 scopus 로고    scopus 로고
    • Fully depleted UTB and trigate N-channel MOSFETs featuring low-temperature PtSi Schottky-barrier contacts with dopant segregation
    • May
    • V. Gudmundsson, P.-E. Hellstrom, J. Luo, J. Lu, S.-L. Zhang, and M. Ostling, "Fully depleted UTB and trigate N-channel MOSFETs featuring low-temperature PtSi Schottky-barrier contacts with dopant segregation, " IEEE Electron Device Lett., vol. 30, no. 5, pp. 541-543, May 2009.
    • (2009) IEEE Electron. Device Lett. , vol.30 , Issue.5 , pp. 541-543
    • Gudmundsson, V.1    Hellstrom, P.-E.2    Luo, J.3    Lu, J.4    Zhang, S.-L.5    Ostling, M.6
  • 7
    • 47249146002 scopus 로고    scopus 로고
    • Enhanced performance of strained CMOSFETs using metallized source/drain extension (M-SDE)
    • in
    • H.-W. Chen, C.-H. Ko, T.-J. Wang, C.-H. Ge, K. Wu, and W.-C. Lee, "Enhanced performance of strained CMOSFETs using metallized source/drain extension (M-SDE), " in VLSI Symp. Tech. Dig., 2007, pp. 118-119.
    • (2007) VLSI Symp. Tech. Dig. , pp. 118-119
    • Chen, H.-W.1    Ko, C.-H.2    Wang, T.-J.3    Ge, C.-H.4    Wu, K.5    Lee, W.-C.6
  • 8
    • 29744445306 scopus 로고    scopus 로고
    • Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
    • Dec
    • J. Knoch, M. Zhang, Q. T. Zhao, S. Lenk, S. Mantl, and J. Appenzeller, "Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation, " Appl. Phys. Lett., vol. 87, no. 26, p. 263 505, Dec. 2005.
    • (2005) Appl. Phys. Lett. , vol.87 , Issue.26 , pp. 263505
    • Knoch, J.1    Zhang, M.2    Zhao, Q.T.3    Lenk, S.4    Mantl, S.5    Appenzeller, J.6
  • 9
    • 53649093754 scopus 로고    scopus 로고
    • Schottky field effect transistors and Schottky CMOS circuitry
    • Dept. Microelectron. Eng., Rochester Inst. Technol., Rochester, NY
    • R. A. Vega, "Schottky field effect transistors and Schottky CMOS circuitry, " M. S. thesis, Dept. Microelectron. Eng., Rochester Inst. Technol., Rochester, NY, 2006.
    • (2006) M. S. Thesis
    • Vega, R.A.1
  • 11
    • 70549090017 scopus 로고    scopus 로고
    • Arsenic-segregated rare-earth silicide junctions: Reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
    • Dec
    • G. Larrieu, D. A. Yarekha, E. Dubois, N. Breil, and O. Faynot, "Arsenic-segregated rare-earth silicide junctions: Reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI, " IEEE Electron Device Lett., vol. 30, no. 12, pp. 1266-1268, Dec. 2009.
    • (2009) IEEE Electron. Device Lett. , vol.30 , Issue.12 , pp. 1266-1268
    • Larrieu, G.1    Yarekha, D.A.2    Dubois, E.3    Breil, N.4    Faynot, O.5
  • 14
    • 47249138982 scopus 로고    scopus 로고
    • Novel doping technology for a 1 nm NiSi/Si junction with dipoles comforting Schottky (DCS) barrier
    • in
    • T. Yamauchi, Y. Nishi, Y. Tsuchiya, A. Kinoshita, J. Koga, and K. Kato, "Novel doping technology for a 1 nm NiSi/Si junction with dipoles comforting Schottky (DCS) barrier, " in IEDM Tech. Dig., 2007, pp. 963-966.
    • (2007) IEDM Tech. Dig. , pp. 963-966
    • Yamauchi, T.1    Nishi, Y.2    Tsuchiya, Y.3    Kinoshita, A.4    Koga, J.5    Kato, K.6
  • 15
    • 37749045251 scopus 로고    scopus 로고
    • A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering
    • Jan
    • Z. Qiu, Z. Zhang, M. Ostling, and S.-L. Zhang, "A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering, " IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 396-403, Jan. 2008.
    • (2008) IEEE Trans. Electron. Devices , vol.55 , Issue.1 , pp. 396-403
    • Qiu, Z.1    Zhang, Z.2    Ostling, M.3    Zhang, S.-L.4
  • 16
    • 58149461557 scopus 로고    scopus 로고
    • Device considerations and design optimizations for dopant segregated Schottky barrier MOSFETs
    • Dec
    • C.-H. Shih and S.-P. Yeh, "Device considerations and design optimizations for dopant segregated Schottky barrier MOSFETs, " Semicond. Sci. Technol., vol. 23, no. 12, p. 125 033, Dec. 2008.
    • (2008) Semicond. Sci. Technol. , vol.23 , Issue.12 , pp. 125033
    • Shih, C.-H.1    Yeh, S.-P.2
  • 17
    • 53649097679 scopus 로고    scopus 로고
    • A comparative study of dopant-segregated Schottky and raised source/drain double-gate MOSFETs
    • Oct
    • R. A. Vega and T.-J. King Liu, "A comparative study of dopant-segregated Schottky and raised source/drain double-gate MOSFETs, " IEEE Trans. Electron Devices, vol. 55, no. 10, pp. 2665-2677, Oct. 2008.
    • (2008) IEEE Trans. Electron. Devices , vol.55 , Issue.10 , pp. 2665-2677
    • Vega, R.A.1    Liu, K.T.-J.2
  • 18
    • 69549116131 scopus 로고    scopus 로고
    • Dopant-segregated Schottky source/drain double-gate MOSFET design in the direct source-to-drain tunneling regime
    • Sep
    • R. A. Vega, K. Liu, and T.-J. King Liu, "Dopant-segregated Schottky source/drain double-gate MOSFET design in the direct source-to-drain tunneling regime, " IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 2016-2026, Sep. 2009.
    • (2009) IEEE Trans. Electron. Devices , vol.56 , Issue.9 , pp. 2016-2026
    • Vega, R.A.1    Liu, K.2    Liu, K.T.-J.3
  • 20
    • 0025577331 scopus 로고
    • Characterization of lateral dopant diffusion in silicides
    • in
    • C. L. Chu, K. C. Saraswat, and S. S. Wong, "Characterization of lateral dopant diffusion in silicides, " in IEDM Tech. Dig., 1990, pp. 245-248.
    • (1990) IEDM Tech. Dig. , pp. 245-248
    • Chu, C.L.1    Saraswat, K.C.2    Wong, S.S.3
  • 21
    • 24644517221 scopus 로고
    • +n junctions using implant through silicide technology
    • Nov
    • +n junctions using implant through silicide technology, " J. Appl. Phys., vol. 72, no. 10, pp. 4619-4626, Nov. 1992.
    • (1992) J. Appl. Phys. , vol.72 , Issue.10 , pp. 4619-4626
    • Chen, B.-S.1    Chen, M.-C.2
  • 22
    • 0001442218 scopus 로고
    • Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation
    • Feb
    • M. Wittmer and K. N. Tu, "Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation, " Phys. Rev. B, Condens. Matter, vol. 29, no. 4, pp. 2010-2020, Feb. 1984.
    • (1984) Phys. Rev. B, Condens. Matter. , vol.29 , Issue.4 , pp. 2010-2020
    • Wittmer, M.1    Tu, K.N.2
  • 25
    • 6344219953 scopus 로고    scopus 로고
    • Junction leakage generation by NiSi thermal instability characterized using damage-free n +/p silicon diodes
    • Aug
    • M. Tsuchiaki, K. Ohuchi, and C. Hongo, "Junction leakage generation by NiSi thermal instability characterized using damage-free n +/p silicon diodes, " Jpn. J. Appl. Phys., vol. 43, no. 8 A, pp. 5166-5173, Aug. 2004.
    • (2004) Jpn. J. Appl. Phys. , vol.43 , Issue.8 A , pp. 5166-5173
    • Tsuchiaki, M.1    Ohuchi, K.2    Hongo, C.3
  • 28
    • 78650760675 scopus 로고    scopus 로고
    • Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation
    • in
    • T. Marukame, T. Yamauchi, Y. Nishi, T. Sasaki, A. Kinoshita, J. Koga, and K. Kato, "Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation, " in IEDM Tech. Dig., 2008, pp. 547-550.
    • (2008) IEDM Tech. Dig. , pp. 547-550
    • Marukame, T.1    Yamauchi, T.2    Nishi, Y.3    Sasaki, T.4    Kinoshita, A.5    Koga, J.6    Kato, K.7
  • 29
    • 64549152383 scopus 로고    scopus 로고
    • Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼
    • in
    • T. Sonehara, A. Hokazono, H. Akutsu, T. Sasaki, H. Uchida, M. Tomita, H. Tsujii, S. Kawanaka, S. Inaba, and Y. Toyoshima, "Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼, " in IEDM Tech. Dig., 2008, pp. 921-924.
    • (2008) IEDM Tech. Dig. , pp. 921-924
    • Sonehara, T.1    Hokazono, A.2    Akutsu, H.3    Sasaki, T.4    Uchida, H.5    Tomita, M.6    Tsujii, H.7    Kawanaka, S.8    Inaba, S.9    Toyoshima, Y.10
  • 30
    • 33644930905 scopus 로고    scopus 로고
    • +p shallow junctions
    • Mar
    • +p shallow junctions, " Jpn. J. Appl. Phys., vol. 45, no. 3 A, pp. 1582-1587, Mar. 2006.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , Issue.3 A , pp. 1582-1587
    • Wang, C.-C.1    Chen, M.-C.2
  • 31
    • 21244497798 scopus 로고    scopus 로고
    • Suppression of thermally induced leakage of NiSi-silicided shallow junctions by pre-silicide fluorine implantation
    • Apr
    • M. Tsuchiaki, K. Ohuchi, and A. Nishiyama, "Suppression of thermally induced leakage of NiSi-silicided shallow junctions by pre-silicide fluorine implantation, " Jpn. J. Appl. Phys., vol. 44, no. 4 A, pp. 1673-1681, Apr. 2005.
    • (2005) Jpn. J. Appl. Phys. , vol.44 , Issue.4 A , pp. 1673-1681
    • Tsuchiaki, M.1    Ohuchi, K.2    Nishiyama, A.3
  • 32
    • 54249091221 scopus 로고    scopus 로고
    • Substrate orientation dependent suppression of NiSi induced junction leakage by fluorine and nitrogen incorporation
    • Apr
    • M. Tsuchiaki and A. Nishiyama, "Substrate orientation dependent suppression of NiSi induced junction leakage by fluorine and nitrogen incorporation, " Jpn. J. Appl. Phys., vol. 47, no. 4, pp. 2388-2397, Apr. 2008.
    • (2008) Jpn. J. Appl. Phys. , vol.47 , Issue.4 , pp. 2388-2397
    • Tsuchiaki, M.1    Nishiyama, A.2
  • 35
    • 52149112090 scopus 로고    scopus 로고
    • Nitrogen impurity effects in nickel silicide formation at low temperatures-New 'nitrogen co-plasma' approach
    • Oct
    • B. Imbert, M. Gregoire, S. Zoll, R. Beneyton, S. Del-Medico, C. Trouiller, and O. Thomas, "Nitrogen impurity effects in nickel silicide formation at low temperatures-New 'nitrogen co-plasma' approach, " Microelectron. Eng., vol. 85, no. 10, pp. 2005-2008, Oct. 2008.
    • (2008) Microelectron. Eng. , vol.85 , Issue.10 , pp. 2005-2008
    • Imbert, B.1    Gregoire, M.2    Zoll, S.3    Beneyton, R.4    Del-Medico, S.5    Trouiller, C.6    Thomas, O.7
  • 36
    • 41749099909 scopus 로고    scopus 로고
    • Systematic TLM measurements of NiSi and PtSi specific contact resistance to n-and p-type Si in a broad doping range
    • Apr
    • N. Stavitski, M. J. H. van Dal, A. Lauwers, C. Vrancken, A. Y. Kovalgin, and R. A. M. Wolters, "Systematic TLM measurements of NiSi and PtSi specific contact resistance to n-and p-type Si in a broad doping range, " IEEE Electron Device Lett., vol. 29, no. 4, pp. 378-381, Apr. 2008.
    • (2008) IEEE Electron. Device Lett. , vol.29 , Issue.4 , pp. 378-381
    • Stavitski, N.1    Van Dal, M.J.H.2    Lauwers, A.3    Vrancken, C.4    Kovalgin, A.Y.5    Wolters, R.A.M.6
  • 37
    • 43749104248 scopus 로고    scopus 로고
    • Evaluation of transmission line model structures for silicide-to-silicon specific contact resistance extraction
    • May
    • N. Stavitski, M. J. H. van Dal, A. Lauwers, C. Vrancken, A. Y. Kovalgin, and R. A. M. Wolters, "Evaluation of transmission line model structures for silicide-to-silicon specific contact resistance extraction, " IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1170-1176, May 2008.
    • (2008) IEEE Trans. Electron. Devices , vol.55 , Issue.5 , pp. 1170-1176
    • Stavitski, N.1    Van Dal, M.J.H.2    Lauwers, A.3    Vrancken, C.4    Kovalgin, A.Y.5    Wolters, R.A.M.6
  • 39
    • 0030232466 scopus 로고    scopus 로고
    • Majority-carrier capture cross section of amphoteric nickel center in silicon studied by isothermal capacitance transient spectroscopy
    • Sep
    • S. Tanaka, K. Matsushita, and H. Kitagawa, "Majority-carrier capture cross section of amphoteric nickel center in silicon studied by isothermal capacitance transient spectroscopy, " Jpn. J. Appl. Phys., vol. 35, no. 9 A, pp. 4624-4625, Sep. 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , Issue.9 A , pp. 4624-4625
    • Tanaka, S.1    Matsushita, K.2    Kitagawa, H.3
  • 40
    • 77951623119 scopus 로고    scopus 로고
    • Advanced source/drain technologies for nanoscale CMOS
    • Univ. California Berkeley, Berkeley, CA
    • P. Kalra, "Advanced source/drain technologies for nanoscale CMOS, " Ph. D. dissertation, Dept. Elect. Eng. Comput. Sci., Univ. California Berkeley, Berkeley, CA, 2008.
    • (2008) Ph. D. Dissertation, Dept. Elect. Eng. Comput. Sci.
    • Kalra, P.1
  • 41
    • 31544442469 scopus 로고    scopus 로고
    • Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
    • Feb
    • E. J. Tan, K. L. Pey, D. Z. Chi, P. S. Lee, and L. J. Tang, "Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si, " IEEE Electron Device Lett., vol. 27, no. 2, pp. 93-95, Feb. 2006.
    • (2006) IEEE Electron. Device Lett. , vol.27 , Issue.2 , pp. 93-95
    • Tan, E.J.1    Pey, K.L.2    Chi, D.Z.3    Lee, P.S.4    Tang, L.J.5
  • 43
    • 73349098396 scopus 로고    scopus 로고
    • The effect of random dopant fluctuation on specific contact resistivity
    • Jan
    • R. A. Vega, V. C. Lee, and T.-J. King Liu, "The effect of random dopant fluctuation on specific contact resistivity, " IEEE Trans. Electron Devices, vol. 57, no. 1, pp. 273-281, Jan. 2010.
    • (2010) IEEE Trans. Electron. Devices , vol.57 , Issue.1 , pp. 273-281
    • Vega, R.A.1    Lee, V.C.2    Liu, K.T.-J.3


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