Tuning of the platinum silicide Schottky barrier height on n-type silicon by sulfur segregation

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 331-333

  Alptekin, Emre ^a   Ozturk, Mehmet C ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

Contact resistance; Platinum; Schottky barriers; Sulfur

Indexed keywords

BARRIER HEIGHTS; DRAIN CONTACTS; N-CHANNEL TRANSISTORS; N-TYPE SILICONS; P-TYPE SI; PLATINUM SILICIDES; PT DEPOSITIONS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SI SUBSTRATES; SULFUR SEGREGATIONS;

CMOS INTEGRATED CIRCUITS; CONTACT RESISTANCE; INTEGRATED CIRCUITS; MOS CAPACITORS; PLATINUM; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SULFUR; TUNING;

SCHOTTKY BARRIER DIODES;

EID: 67349272765     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014182     Document Type: Article

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