Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 5, 2010, Pages 1044-1047

  Chang, Chih Yang ^a   Anderson, Travis ^b   Hite, Jennifer ^b   Lu, Liu ^a   Lo, Chien Fong ^a   Chu, Byung Hwan ^a   Cheney, D J ^a   Douglas, E A ^a   Gila, B P ^a   Ren, F ^a   Via, G D ^c   Whiting, Patrick ^a   Holzworth, R ^a   Jones, K S ^a   Jang, Soohwan ^d   Pearton, S J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d Dankook University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM NITRIDE; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ELECTRIC FIELD STRENGTH; ELECTROLUMINESCENCE INTENSITY; GATE BIAS; GATE CURRENT; GATE METALS; GATE REGION; INDUCED DEGRADATION; NATIVE OXIDE LAYER; ORDERS OF MAGNITUDE; REVERSE BIAS; REVERSE GATE; SHARP INCREASE; SOURCE-DRAIN VOLTAGE; STEP-STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957744527     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3491038     Document Type: Article

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