Wideband high power GaN on SiC SPDT switch MMICs

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 145-148

  Campbell, Charles F ^a   Dumka, Deep C ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Gallium nitride; High power; MMIC; Silicon carbide; Switch

Indexed keywords

CONTINUOUS-WAVE POWER; FREQUENCY RANGES; HIGH-POWER; INPUT POWER; MMIC; RF-POWER; S-PARAMETER DATA; WIDE-BAND;

GALLIUM ALLOYS; GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; WAVE POWER;

DC POWER TRANSMISSION;

EID: 77957816368     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5516675     Document Type: Conference Paper

References (6)

1. Yu, M., Ward, R. J., Hovda, D. H., Hegazi, G. M., Hanson, A. W. and Linthicum, K., "The Development of a High Power SP4T RF Switch in GaN HFET Technology", IEEE Microwave and Wireless Components Letters, vol.17, No 12, pp. 894-896, Dec. 2007.
2. Hangai, M., Nishino, T., Kamo, Y. and Miyazaki, M., "An Sband IOOW GaN Protection Switch," IEEE MTT-S Int. Microwave Symp. Dig., 2007, pp. 1389-1392.
3. Ma, B. Y., Boutros, K. S., Hacker, J. B. and Nagy, G., "High Power AIGaN/GaN Ku-Band MMIC SPDT Switch and Design Consideration," IEEE MTT-S Int. Microwave Symp. Dig., 2008, pp. 1473-1476.
4. Koudymov, A., Rai, S., Adivarahan, Y., Gaevski, M., Yang, J., Simin, G. and Khan, M. A. "Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors", IEEE Microwave and Wireless Components Letters, vol.14, No 12, pp. 560-562, Dec. 2004.
5. Campbell, C. F., Lee, C., Williams, Y., Kao, M. Y., Tserng, H. Q., Saunier, P. and T. Balisteri "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology". IEEE Journal of Solid State Circuits, vol.44, no.10, Oct. 2009, pp. 2640-2647.
6. Campbell, C. F., Dumka, D. C. and Kao, M. Y., "Design Considerations for GaN Based MMICs". COMCAS 2009-Tech Digest. IMS