Critical voltage for electrical reliability of GaN high electron mobility transistors on Si substrate

2009 Reliability of Compound Semiconductors Digest - ROCS Workshop

Volumn , Issue , 2009, Pages 53-56

  Demirtas, S ^a   Del Alamo, J A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL VOLTAGES; DEGRADATION PATTERNS; ELECTRICAL RELIABILITY; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE CURRENT; SI SUBSTRATES; STEP-STRESS;

DEGRADATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTING GALLIUM; SILICON; SILICON CARBIDE; SILICON WAFERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72449146222     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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3. P. Javorka, et al, "Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates," Microelectronics Journal, Volume 34, Issues 5-8 Pages 435-437. 2003.
4. Piner, E.L. et al, "Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities," Electron Devices Meeting, 2006. IEDM '06. International, vol., no., pp.1-4, 11-13 Dec. 2006.
5. Singhal, S. et al, "Reliability of large periphery GaN-on-Si HFETs," ROCS Workshop, pp. 135-149.2005.
6. S. Singhal, et al, "GaN-On-Si Reliability: A Comparative Study Between Process Platforms," ROCS Workshop, pp.21-24. 2006.
7. Joh, Jungwoo; del Alamo, Jesus A., "Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors," Electron Devices Meeting, International pp.1-4, 11-13 Dec. 2006.
8. Joh, Jungwoo; Xia, Ling; del Alamo, J.A., "Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors," Electron Devices Meeting, International, pp.385-388, 10-12 Dec. 2007.
9. Jungwoo Joh; del Alamo, J.A., "Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors," Electron Device Letters, IEEE, vol.29, no.4, pp.287-289, April 2008.
10. M. Asif Khan, et al, "GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates," Appl. Phys. Lett. 76, 3807 (2000).
11. N. Maeda et al, "Two-dimensional electron-gas density in AlGaN heterostructure field-effect transistors," Appl. Phys. Lett. 73, 1856 (1998).
12. Joh, Jungwoo, et al, "A model for the critical voltage for electrical degradation of GaN high electron mobility transistors," ROCS Workshop 2009.