Long-term stability of gallium nitride high electron mobility transistors: A reliability physics approach

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 212-217

  Zanoni, Enrico ^a   Meneghesso, Gaudenzio ^a   Meneghini, Matteo ^a   Tazzoli, Augusto ^a   Ronchi, Nicolò ^a   Stocco, Antonio ^a   Zanon, Franco ^a   Chini, Alessandro ^b   Verzellesi, Giovanni ^b   Cetronio, Antonio ^c   Lanzieri, Claudio ^c   Peroni, Marco ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS OF FAILURE MODES; DEEP LEVEL; DEVICE SIMULATIONS; ELECTRICAL CHARACTERISTIC; FAILURE MECHANISM; FAILURE MODES AND MECHANISMS; GAN HEMTS; HIGH ELECTRIC FIELDS; INFORMATION CONCERNING; LONG TERM STABILITY; MEAN TIME TO FAILURE; MILLIMETER MICROWAVES; OUTPUT POWER; PULSED MEASUREMENTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRON MOBILITY; FAILURE ANALYSIS; FLUORINE CONTAINING POLYMERS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; QUALITY ASSURANCE; SAFETY FACTOR; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72449148249     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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