Comparison of (001), (110) and (111) uniaxial- And biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Krishnamohan, Tejas ^a,d   Kim, Donghyun ^a   Dinh, Thanh Viet ^b   Pham, Anh Tuan ^c   Meinerzhagen, Bernd ^c   Jungemann, Christoph ^b   Saraswat, Krishna ^a  

^a STANFORD UNIVERSITY   (United States)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDSTRUCTURE; CHANNEL ORIENTATIONS; DRIVE CURRENTS; EMPIRICAL PSEUDOPOTENTIAL METHODS; FULL BANDS; HIGH-FIELD TRANSPORTS; MOBILITY ENHANCEMENTS; MONTE-CARLO SIMULATIONS; NANO-SCALE; NON LOCALS; OFF-STATE LEAKAGES; QUANTUM EFFECTS; STRAINED-GE; STRAINED-SI; SWITCHING DELAYS;

ELECTRON DEVICES; GERMANIUM; MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON;

DIELECTRIC MATERIALS;

EID: 64549121031     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796845     Document Type: Conference Paper

References (11)

1. T. Ghani et al, IEDM, p. 978, 2003.
2. T. Krishnamohan et al, IEDM, p. 937, 2006
3. T. Krishnamohan et al, VLSI Symp. p. 82, 2005.
4. T. Krishnamohan et al, TED p.990, May 2006.
5. S. Takagi et al, JAP, p. 1567, 1996.
6. M. Fischetti and S. Laux, JAP, p.4, 1996.
7. M. Rieger and P. Vogl, PRB, p. 14276, 1993.
8. C. Jungemann and B. Meinerzhagen, Springer, 2003.
9. A. Pham et al, TED, p.2174-2182 Sep 2007.
10. M. Yang et al, IEDM, p. 18.7.1, 2003.
11. D. Kim et al, IEEE SISPAD, 2006.