Improved effective mobility extraction in MOSFETs

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1252-1256

  Thomas, S M ^a   Whall, T E ^a   Parker, E H C ^a   Leadley, D R ^a   Lander, R J P ^b   Vellianitis, G ^b   Watling, J R ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b NXP SEMICONDUCTORS   (Netherlands)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

finFET; Mobility; MOSFET; SOI

Indexed keywords

C-V MEASUREMENT; DRAIN BIAS; EFFECTIVE MOBILITIES; ELECTRICAL MEASUREMENT; MOS-FET; MOSFETS; NOVEL TECHNIQUES; SOI FINFETS; STANDARD METHOD;

FIELD EFFECT TRANSISTORS; MOSFET DEVICES;

CARRIER MOBILITY;

EID: 71649096901     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.014     Document Type: Article

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