Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Saitoh, Masumi ^a   Yasutake, Nobuaki ^b   Nakabayashi, Yukio ^a   Numata, Toshinori ^a   Uchida, Ken ^c  

^a Advanced LSI Technology Laboratory   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOSFETS; COMPREHENSIVE PERFORMANCE ASSESSMENTS; DOMINANT FACTORS; EXCELLENT PERFORMANCE; STRESS EFFECTS; SYSTEMATIC STUDIES; TRANSVERSE COMPRESSIVE STRESS; VELOCITY SATURATIONS;

ELECTRON DEVICES; SEMICONDUCTING SILICON; SPEECH ANALYSIS; VELOCITY;

THERMAL NOISE;

EID: 78650760921     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796754     Document Type: Conference Paper

References (7)

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