Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Li, J ^a   Anjum, D ^a   Hull, R ^a   Xia, G ^b   Hoyt, J L ^b  

^a University of Virginia   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION CONTRAST IMAGING (EDCI); FOCUSED ION BEAM MICROMACHINING; SPATIAL RESOLUTION; STRESS FIELDS;

COMPUTER SIMULATION; ELECTRON DIFFRACTION; IMAGING TECHNIQUES; ION BEAMS; MICROMACHINING; MOSFET DEVICES; SEMICONDUCTING SILICON; STRESS CONCENTRATION;

STRESS ANALYSIS;

EID: 27944465650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135388     Document Type: Article

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