Mobility enhancement in strained n-FinFETs: Basic insight and stress engineering

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 482-490

  Serra, Nicola ^a   Esseni, David ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Crystal orientation; Electron mobility; FinFET; Strain; Strain engineering

Indexed keywords

ANALYTICAL EXPRESSIONS; ANALYTICAL MODEL; DEVICE OPTIMIZATION; FINFETS; MOBILITY ENHANCEMENT; MONTE CARLO; MONTE CARLO SIMULATION; N TYPE SILICON; PHYSICAL MECHANISM; STRAIN ENGINEERING; STRESS COMPONENT; STRESS ENGINEERING; STRESS-INDUCED; SUB-BANDS; TRANSPORT MASS;

COMPUTER SIMULATION; ELECTRON MOBILITY; MODELS; MONTE CARLO METHODS;

CRYSTAL ORIENTATION;

EID: 76349113125     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2037369     Document Type: Article

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