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Volumn , Issue , 2010, Pages 299-302

Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors

Author keywords

[No Author keywords available]

Indexed keywords

CPU TIME; DIFFERENT GEOMETRY; EIGENVALUE PROBLEM; FINITE DIFFERENCE; MOS TRANSISTORS; NANOSCALE MOS TRANSISTORS; NUMERICAL EFFICIENCY; PSEUDOSPECTRAL METHODS; QUANTIZATION EFFECTS;

EID: 78649535266     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2010.5604499     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 1
    • 3843072030 scopus 로고    scopus 로고
    • The spectral grid method: A novel fast schrödinger-equation solver for semiconductor nanodevice simulation
    • Aug.
    • Q. H. Liu, C. Cheng, and H. Massoud, "The Spectral Grid Method: a Novel Fast Schrödinger-Equation Solver for Semiconductor Nanodevice Simulation," IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, vol. 23, no. 8, pp. 1200-1208, Aug. 2004.
    • (2004) IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems , vol.23 , Issue.8 , pp. 1200-1208
    • Liu, Q.H.1    Cheng, C.2    Massoud, H.3
  • 2
    • 24944580977 scopus 로고    scopus 로고
    • Spectral element method for the Schrödinger-Poisson system
    • DOI 10.1007/s10825-004-7088-z
    • C. Cheng, Q. H. Liu, J.-H. Lee, and H. Z. Massoud, "Spectral Element Method for the Schrödinger-Poisson System," Journal of Computational Electronics, vol. 3, pp. 417-421, 2004. (Pubitemid 41300598)
    • (2004) Journal of Computational Electronics , vol.3 , Issue.3-4 , pp. 417-421
    • Cheng, C.1    Liu, Q.H.2    Lee, J.-H.3    Massoud, H.Z.4
  • 4
    • 50949127144 scopus 로고    scopus 로고
    • 3-D self-consistent schrödinger-poisson solver: The spectral element method
    • C. Cheng, J.-H. Lee, H. Z. Massoud, and Q. H. Liu, "3-D Self-Consistent Schrödinger-Poisson Solver: the Spectral Element Method," Journal of Computational Electronics, vol. 7, pp. 337-341, 2008
    • (2008) Journal of Computational Electronics , vol.7 , pp. 337-341
    • Cheng, C.1    Lee, J.-H.2    Massoud, H.Z.3    Liu, Q.H.4
  • 7
    • 0043269756 scopus 로고    scopus 로고
    • Sixband k p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
    • M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, "Sixband k p Calculation of the Hole Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Strain, and Silicon Thickness," Journal of Applied Physics, vol. 94, no. 2, pp. 1079-1095, 2003.
    • (2003) Journal of Applied Physics , vol.94 , Issue.2 , pp. 1079-1095
    • Fischetti, M.V.1    Ren, Z.2    Solomon, P.M.3    Yang, M.4    Rim, K.5
  • 8
    • 84898466300 scopus 로고    scopus 로고
    • Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering
    • D. Esseni, F. Conzatti, M. De Michielis, N. Serra, P. Palestri, L. Selmi, "Semi-classical Transport Modelling of CMOS Transistors with Arbitrary Crystal Orientations and Strain Engineering," Journal of Computational Electronics, vol. 8, pp. 209-224, 2009.
    • (2009) Journal of Computational Electronics , vol.8 , pp. 209-224
    • Esseni, D.1    Conzatti, F.2    De Michielis, M.3    Serra, N.4    Palestri, P.5    Selmi, L.6
  • 9
    • 34347245893 scopus 로고    scopus 로고
    • Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
    • 6pp
    • M. Bescond, N. Cavassilas, and M. Lannoo, "Effective-mass Approach for n-type Semiconductor Nanowire MOSFETs Arbitrarily Oriented," Nanotechnology, vol. 18, no. 25, p. 255201 (6pp), 2007.
    • (2007) Nanotechnology , vol.18 , Issue.25 , pp. 255201
    • Bescond, M.1    Cavassilas, N.2    Lannoo, M.3
  • 10
    • 30344446993 scopus 로고    scopus 로고
    • Investigating the performance limits of silicon-nanowire and carbonnanotube FETs
    • A. Marchi, E. Gnani, S. Reggiani, M. Rudan, and G. Baccarani, "Investigating the Performance Limits of Silicon-nanowire and Carbonnanotube FETs," Solid-State Electronics, vol. 50, no. 1, pp. 78 - 85, 2006.
    • (2006) Solid-State Electronics , vol.50 , Issue.1 , pp. 78-85
    • Marchi, A.1    Gnani, E.2    Reggiani, S.3    Rudan, M.4    Baccarani, G.5
  • 11
    • 84893264597 scopus 로고    scopus 로고
    • Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
    • S. Jin, M. V. Fischetti, and T. wei Tang, "Modeling of Electron Mobility in Gated Silicon Nanowires at Room Temperature: Surface Roughness Scattering, Dielectric Screening, and Band Nonparabolicity," Journal of Applied Physics, vol. 102, no. 8, p. 083715, 2007.
    • (2007) Journal of Applied Physics , vol.102 , Issue.8 , pp. 083715
    • Jin, S.1    Fischetti, M.V.2    Tang, T.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.