Modeling of piezoresistive coefficients in Si hole inversion layers

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 121-124

  Pham, A T ^a   Jungemann, C ^b   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY SURFACES; BIAXIAL STRAINS; CHANNEL ORIENTATIONS; DIAMOND CRYSTALS; EXTRACTION TECHNIQUES; INVERSION LAYER; LATTICE MATERIALS; MOBILITY MODEL; MOBILITY VARIATION; PIEZORESISTIVE COEFFICIENTS; SELF-CONSISTENT SOLUTION; SIMULATION RESULT; UNIAXIAL STRESS;

POISSON EQUATION;

HOLE MOBILITY;

EID: 67650699276     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897553     Document Type: Conference Paper

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