Drive-current enhancement in FinFETs using gate-induced stress

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 769-771

  Tan, Kian Ming ^a   Liow, Tsung Yang ^a,b   Lee, Rinus T P ^a   Tung, Chih Hang ^b   Samudra, Ganesh S ^a   Yoo, Won Jong ^a,c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c Sungkyunkwan University   (South Korea)

Author keywords

FinFET; Metal gate; Mobility; Multiple gate transistor; Strain; Stress

Indexed keywords

ELECTRODES; SEMICONDUCTING SILICON; STRAIN; STRESSES; THERMAL EXPANSION;

CAPPING LAYER; GATE-INDUCED STRESS; METAL GATE; MULTIPLE-GATE TRANSISTOR; THERMAL EXPANSION COEFFICIENT;

FIELD EFFECT TRANSISTORS;

EID: 33748536739     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880657     Document Type: Article

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