Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 110-111

  Van Dal, M J H ^a   Collaert, N ^b   Doornbos, G ^a   Vellianitis, G ^a   Curatola, G ^a   Pawlak, B J ^a   Duffy, R ^a   Jonville, C ^a   Degroote, B ^b   Altamirano, E ^b   Kunnen, E ^b   Demand, M ^b   Beckx, S ^b   Vandeweyer, T ^b   Delvaux, C ^b   Leys, F ^b   Hikavyy, A ^b   Rooyackers, R ^b   Kaiser, M ^c   Weemaes, R G R ^c   Biesemans, S ^b   Jurczak, M ^b   Anil, K ^b   Witters, L ^b   Lander, R J P ^a   more..

^a NXP SEMICONDUCTORS   (Netherlands)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FINS (HEAT EXCHANGE); FLUID MECHANICS; HEALTH; HETEROJUNCTION BIPOLAR TRANSISTORS; LITHOGRAPHY; METALLIZING; METALS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; PARAMETRIC DEVICES; PHOTORESISTS; PRESSURE DROP; THRESHOLD VOLTAGE; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

193NM IMMERSION LITHOGRAPHY; ACCESS RESISTANCE; DRY-ETCH; FIN WIDTHS; FINFETS; FULLY DEPLETED; FULLY-DEPLETED (FD); GA TE LENGTHS; HIGH ASPECT RATIO (HAR); HIGH K DIELECTRICS; IMMERSION LITHOGRAPHY (IML); IMPLANTATION DAMAGE; LOW LEAKAGE DEVICES (LLD); METAL ELECTRODES; PARASITIC RESISTANCES; SELECTIVE EPITAXIAL GROWTH (NSEG); SHORT-CHANNEL EFFECT (SCE); SOURCE AND DRAIN (S/D); TRI-GATE; VLSI TECHNOLOGIES; WITHIN DIE (WID);

ASPECT RATIO;

EID: 38649140309     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339747     Document Type: Conference Paper

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