Gatestacks for scalable high-performance FinFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 681-684

  Vellianitis, G ^a   Van Dal, M J H ^a   Witters, L ^b   Curatola, G ^a   Doornbos, G ^a   Collaert, N ^b   Jonville, C ^a   Torregiani, C ^b   Lai, L S ^c   Petry, J ^a   Pawlak, B J ^a   Duffy, R ^a   Demand, M ^b   Beckx, S ^b   Mertens, S ^b   Delabie, A ^b   Vandeweyer, T ^b   Delvaux, C ^b   Leys, F ^b   Hikavyy, A ^b   Rooyackers, R ^b   Kaiser, M ^d   Weemaes, R Gr ^d   Voogt, F ^e   Roberts, H ^e   Donnet, D ^e   Biesemans, S ^b   Jurczak, M ^b   Lander, R J P ^a   more..

^a NXP TSMC Research Center   (Belgium)

^b IMEC   (Belgium)

^c TSMC ^*

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EXCELLENT PERFORMANCE; FINFETS;

ELECTRON DEVICES;

EID: 50249095101     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419037     Document Type: Conference Paper

References (9)

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5. N. Collaert et al., VLSI Conf. 2006, p52
6. C.Y. Kang et al., IEDM 2006, p885
7. A. Kaneko et al., IEDM 2006, p893
8. Duffy al., APL-90, 2007, p.241912
9. K. Choi et al. VLSI-TSA. 2005, p103.