Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Zhang, Peng ^b   Istratov, Andrei A ^a   Weber, Eicke R ^a   Kisielowski, Christian ^b   He, Haifeng ^b   Nelson, Chris ^b   Spence, John C H ^b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERGENT-BEAM ELECTRON DIFFRACTION (CBED); SILICON DEVICE TECHNOLOGY; SILICON TRANSISTOR; STRAIN COMPONENT;

COMPRESSIVE STRESS; ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOS DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

TRANSISTORS;

EID: 33750148553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2362978     Document Type: Article

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