Comprehensive understanding of surface roughness and Coulom scattering mobility in biaxially-strained Si MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Zhao, Yi ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERINGS; INTERBAND SCATTERINGS; INTERFACE STATE; SCATTERING CENTERS; STRAINED SI MOSFETS; SURFACE ROUGHNESS SCATTERINGS; TENSILE BIAXIAL STRAINS;

ELECTRON DEVICES; ELECTRONS; MOSFET DEVICES; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SURFACE PROPERTIES; SURFACE ROUGHNESS;

TENSILE STRAIN;

EID: 64549141904     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796755     Document Type: Conference Paper

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