Fast resistance switching of TiO2 and MSQ thin films for non-volatile memory applications (RRAM)

Proceedings - 2008 9th Annual Non-Volatile Memory Technology Symposium, NVMTS 2008

Volumn , Issue , 2008, Pages

  Kugeler C ^a   Nauenheim, C ^a   Meier, M ^a   Rudiger A ^a   Waser, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Component; MSQ; Nanoimprint lithography; Resistance switching; TiO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; FABRICATION; SWITCHING; THIN FILMS;

CMOS TECHNOLOGIES; COMPONENT; E-BEAM LITHOGRAPHIES; ELECTRICAL PERFORMANCE; FABRICATION METHODS; HIGH DENSITIES; LOW COSTS; MSQ; NANO-IMPRINT LITHOGRAPHIES; NANO-SCALE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATIONS; ORDERS OF MAGNITUDES; RESISTANCE CHANGES; RESISTANCE STATE; RESISTANCE SWITCHING; RETENTION TIME; ROOM TEMPERATURES; SWITCH SIGNALS; SWITCHING SPEED; TIO2;

NANOIMPRINT LITHOGRAPHY;

EID: 62349137637     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2008.4731195     Document Type: Conference Paper

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