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Volumn 30, Issue 2, 2009, Pages 120-122

Improvement of CBRAM resistance window by scaling down electrode size in pure-GeTe film

Author keywords

Conductive bridging random access memory (CBRAM); Cu; Dry process; E beam lithography; GeTe; On off ratio; Scaling down; TaN

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRON BEAM LITHOGRAPHY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES; SILVER; TANNING; TANTALUM COMPOUNDS;

EID: 59649097566     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2009774     Document Type: Article
Times cited : (41)

References (6)
  • 2
    • 21644455568 scopus 로고    scopus 로고
    • Status and outlook of emerging nonvolatile memory technologies
    • G. Muller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, "Status and outlook of emerging nonvolatile memory technologies," in IEDM Tech. Dig., 2004, pp. 567-570.
    • (2004) IEDM Tech. Dig , pp. 567-570
    • Muller, G.1    Happ, T.2    Kund, M.3    Lee, G.Y.4    Nagel, N.5    Sezi, R.6
  • 4
    • 3242657447 scopus 로고    scopus 로고
    • Information storage using nanoscale electrodeposition of metal in solid electrolytes
    • Sep.-Dec
    • M. N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, "Information storage using nanoscale electrodeposition of metal in solid electrolytes," Superlattices Microstruct., vol. 34, no. 3-6, pp. 459-465, Sep.-Dec. 2003.
    • (2003) Superlattices Microstruct , vol.34 , Issue.3-6 , pp. 459-465
    • Kozicki, M.N.1    Mitkova, M.2    Park, M.3    Balakrishnan, M.4    Gopalan, C.5
  • 5
    • 33748479283 scopus 로고    scopus 로고
    • 5 thin films by metal organic chemical vapor deposition for phase change memory applications, Appl. Phys. Lett., 89, no. 10, pp. 102 107-1-102 107-3, Sep. 2006.
    • 5 thin films by metal organic chemical vapor deposition for phase change memory applications," Appl. Phys. Lett., vol. 89, no. 10, pp. 102 107-1-102 107-3, Sep. 2006.
  • 6
    • 33745763280 scopus 로고    scopus 로고
    • Investigation on etch characteristics of GeSbTe thin films for phase-change memory
    • Nov
    • I. H. Park, J. W. Lee, and C. W. Chung, "Investigation on etch characteristics of GeSbTe thin films for phase-change memory," Integr. Ferroelectr., vol. 80, no. 1, pp. 207-218, Nov. 2006.
    • (2006) Integr. Ferroelectr , vol.80 , Issue.1 , pp. 207-218
    • Park, I.H.1    Lee, J.W.2    Chung, C.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.