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Volumn 30, Issue 2, 2009, Pages 120-122
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Improvement of CBRAM resistance window by scaling down electrode size in pure-GeTe film
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Author keywords
Conductive bridging random access memory (CBRAM); Cu; Dry process; E beam lithography; GeTe; On off ratio; Scaling down; TaN
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Indexed keywords
BIPOLAR SEMICONDUCTOR DEVICES;
ELECTRON BEAM LITHOGRAPHY;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR DEVICES;
SILVER;
TANNING;
TANTALUM COMPOUNDS;
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY (CBRAM);
CU;
DRY PROCESS;
E-BEAM LITHOGRAPHY;
GETE;
ON/OFF RATIO;
SCALING DOWN;
TAN;
COPPER;
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EID: 59649097566
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/LED.2008.2009774 Document Type: Article |
Times cited : (41)
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References (6)
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