Characterization of silver-saturated Ge-Te chalcogenide thin films for nonvolatile random access memory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 721-724

  Kim, Cheol Jung ^a   Yoon, Soon Gil ^a   Choi, Kyu Jeong ^b   Ryu, Sang Ouk ^b   Yoon, Sung Min ^b   Lee, Nam Yeal ^b   Yu, Byoung Gon ^b  

^a Chungnam National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DIFFUSION; ELECTROLYTES; METALLIZING; NONVOLATILE STORAGE; SPUTTERING; SWITCHES; THIN FILMS;

CHALCOGENIDE; COSPUTTERING TECHNIQUE; ELECTROLYTE FILMS; SILVER SATURATION;

RANDOM ACCESS STORAGE;

EID: 33645544859     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2180260     Document Type: Article

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