A programmable metallization cell based on Ag-As2S3

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 6, 2006, Pages 2117-2119

  Stratan, I ^a   Tsiulyanu, D ^a   Eisele, I ^b  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Ag As2s 3; Chalcogenides; Memory switching; Programmable metallization cell; Solid electrolytes

Indexed keywords

BIAS VOLTAGE; CHALCOGENIDES; METALLIZING; METALS; POTENTIOMETRIC SENSORS; SILVER COMPOUNDS; THRESHOLD VOLTAGE;

CHALCOGENIDE GLASSY SEMICONDUCTORS; FORWARD BIAS VOLTAGE; FREQUENCY DEPENDENCE; MEMORY SWITCHING; PROGRAMMABLE METALLIZATION CELLS; SUPERIONIC TRANSITION; SWITCHING PROPERTIES; SWITCHING THRESHOLDS;

SOLID ELECTROLYTES;

EID: 33845665832     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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