An atomic scale study on the effect of Sb during capping of MBE grown III-V semiconductor QDs

Semiconductor Science and Technology

Volumn 26, Issue 6, 2011, Pages

  Bozkurt, M ^a   Ulloa, J M ^b   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CAPPING LAYER; CAPPING PROCESS; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; EMISSION WAVELENGTH; II-IV SEMICONDUCTORS; INAS/GAAS; INAS/INP; PHOTOLUMINESCENCE MEASUREMENTS; PL PROPERTY; QUANTUM DOTS; SUB-LATTICES; SURFACTANT EFFECTS;

ATOMIC FORCE MICROSCOPY; LATTICE MISMATCH; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE ACTIVE AGENTS;

ANTIMONY;

EID: 79953905724     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/6/064007     Document Type: Article

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